(Samsung, January 13) Samsung Electronics, a world leader in advanced semiconductor technology, today announced its demonstration of the world’s first in-memory computing based on MRAM (Magnetoresistive Random Access Memory). The paper on this innovation was published online by Nature on January 12 (GMT), and is set to be published in the upcoming print edition of Nature. Titled ‘A crossbar array of magnetoresistive memory devices for in-memory computing’, this paper showcases Samsung’s leadership in memory technology and its effort to merge memory and system semiconductors for next-generation artificial intelligence (AI) chips.
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