Researchers report the first all-antiferromagnetic tunnel junction device with both electrical switching and electrical readout

(MRAM-Info, March 23) Researchers from Northwestern University, led by Prof. Pedram Khalili, report the first all-antiferromagnetic tunnel junction (ATJ) devices with both electrical switching and electrical readout of the antiferromagnetic state. The researchers observed a large room-temperature tunneling magnetoresistance effect that is comparable in size to conventional ferromagnet-based tunnel junctions.